Alghamdi, S. 2023. Comprehensive Investigation of the Side-gate Effect on the RF Small-signal Equivalent Elements of AlGaN/GaN High-Electron-Mobility Transistor on a Silicon Substrate. Journal of King Abdulaziz University: Engineering Sciences. 33, 2 (Dec. 2023). DOI:https://doi.org/10.4197/Eng.33-2.4.