ALGHAMDI, S. Comprehensive Investigation of the Side-gate Effect on the RF Small-signal Equivalent Elements of AlGaN/GaN High-Electron-Mobility Transistor on a Silicon Substrate. Journal of King Abdulaziz University: Engineering Sciences, [S. l.], v. 33, n. 2, 2023. DOI: 10.4197/Eng.33-2.4. Disponível em: https://journals.kau.edu.sa/index.php/JENGSCI/article/view/989. Acesso em: 11 apr. 2025.