Alghamdi, S. (2023) “Comprehensive Investigation of the Side-gate Effect on the RF Small-signal Equivalent Elements of AlGaN/GaN High-Electron-Mobility Transistor on a Silicon Substrate”, Journal of King Abdulaziz University: Engineering Sciences, 33(2). Available at: https://journals.kau.edu.sa/index.php/JENGSCI/article/view/989 (Accessed: 22 December 2024).